Morgan Advanced Materials recently announced advances in its range of materials grown using chemical vapor deposition (CVD) processes. Morgan’s CVD silicon
carbide (SiC) and pyrolytic boron nitride (PBN) materials are reportedly ideal for use in semiconductor applications, including rapid thermal processing and plasma etch process chamber components, as well as metalorganic CVD tools for high-brightness white LED manufacturing using the indium gallium nitride process.
Morgan’s improved CVD SiC growth capability enables the manufacture of 300+ mm diameter components with thicknesses of more than 10 mm at production volumes for recently developed plasma etch applications. Through ultrasonic machining capability, Morgan offers high-tolerance CNC machining and precision hard grinding, as well as the patented Rmax process for producing focus CVD SiC ring shapes.
Morgan’s high-purity (99.999+%) SiC material has high thermal conductivity, is resistant to chemical erosion, and features minimal particulate generation, making it ideal for use in chlorine and fluorine plasma etch processes. The material is ideally suited for use in producing gas distribution plates (GDMs) where the material’s erosion resistance can lead to long life and extended tool PM schedules. Ultrasonic drilling can provide holes with diameters as small as 0.5 mm for custom etch applications.
High-purity (99.99+ %) PBN materials have a working temperature in excess of 1,500°C and feature high electrical resistivity and high dielectric strength. Extremely low out-gassing, non-wetting, and non-toxic, the PBN materials are inert to most acids, alkalis and organic solvents and have high thermal conductivity in the “a” direction. The advanced materials are a viable option for manufacturers of PBN-coated graphite heaters and PBN effusion cell components.