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Dow Corning Electronics: Spin-On Dielectric

July 30, 2003
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Dow Corning Electronics recently introduced Dow Corning(R) ZP-1105 Spin-on STI. The spin-on dielectric, developed in response to increasing requests from industry leaders, is designed for void-free gap fill of high-aspect-ratio shallow trench isolation (STI) structures. Targeted to volume production of logic and memory devices with 65-nanometer and below feature sizes, ZP-1105 is currently available. At technology nodes of 65 nanometers and below, it becomes increasingly difficult for high-density plasma chemical vapor deposition (HDPCVD) films to produce void-free gap fill, due to the narrower features and high aspect ratios at those nodes. ZP-1105 reduces the effective aspect ratio, allowing the creation of void-free STI structures at technology nodes down to 45 nanometers.

For additional information, visit http://www.dowcorning.com/electronics .

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