CoorsTek Unveils Enhanced GaN-on-Silicon Epiwafers at ISPSD 2016
CoorsTek unveiled its enhanced gallium nitride on silicon (GaN-on-Si) epiwafers at the recent International Symposium on Power Semiconductor Devices and ICs (ISPSD).
CoorsTek unveiled its enhanced gallium nitride on silicon (GaN-on-Si) epiwafers at the recent International Symposium on Power Semiconductor Devices and ICs (ISPSD) in Prague, Czech Republic. CoorsTek displayed the integrated capabilities of CoorsTek and Covalent Materials, including: GaN-on-Si Epiwafers for power devices and integrated circuits (ICs); aluminum nitride (AlN) substrates for hybrid circuits; and engineered ceramic components for semiconductor processing equipment made from PureSiC® CVD silicon carbide, PlasmaPure™ high-purity alumina, and other technical ceramics.
“The latest CoorsTek gallium nitride-on-silicon technology helps customers achieve higher device manufacturing yields and breakdown voltages based on lower defect densities and leakage current,” said Jun Komiyama, Ph.D., R&D manager. “The shift from 150 mm to 200 mm diameter GaN-on-Si process is also improving the economics for power electronics in electric and hybrid automobiles, solar photovoltaic inverters, RF and microwave power, and more.”
For more information, visit http://coorstek.com.