GTAT Opens New Silicon Carbide Manufacturing Facility
The facility, located in Hudson, N.H., also includes the company’s new corporate headquarters, as well as its advanced research and development center.
GTAT Corp. opened a new state-of-the-art silicon carbide manufacturing plant with a ribbon-cutting ceremony on June 26, 2018, that included state and local officials who were on hand to commemorate the event. The facility, located in Hudson, N.H., also includes the company’s new corporate headquarters, as well as its advanced research and development center.
“The opening of our new silicon carbide production facility represents a significant milestone for the company’s transition from an equipment provider to a materials company,” said Greg Knight, GTAT’s president and CEO. “This beautiful, new production facility positions us as one of the only companies in the world with the know-how and capacity to offer high-quality silicon carbide material for a growing number of power electronics applications in high growth markets. Our expertise in crystal growth equipment, managing supply chains and deep domain knowledge in a number of advanced materials has given us a competitive advantage in meeting the growing demand for wide-band-gap semiconductors.”
To learn more, visit www.gtat.com.